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Электронный компонент: CD74HC10

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1
Data sheet acquired from Harris Semiconductor
SCHS128
Features
Buffered Inputs
Typical Propagation Delay: 8ns at V
CC
= 5V,
C
L
= 15pF, T
A
= 25
o
C
Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
Wide Operating Temperature Range . . . -55
o
C to 125
o
C
Balanced Propagation Delay and Transition Times
Significant Power Reduction Compared to LSTTL
Logic ICs
HC Types
- 2V to 6V Operation
- High Noise Immunity: N
IL
= 30%, N
IH
= 30% of V
CC
at V
CC
= 5V
HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V
IL
= 0.8V (Max), V
IH
= 2V (Min)
- CMOS Input Compatibility, I
l
1
A at V
OL
, V
OH
Related Literature
- CD54HC10F3A and CD54HCT10F3A Military
Data Sheet, Document Number 3758
Description
The Harris CD74HC10, CD74HCT10, logic gates utilize
silicon gate CMOS technology to achieve operating speeds
similar to LSTTL gates with the low power consumption of
standard CMOS integrated circuits. All devices have the
ability to drive 10 LSTTL loads. The 74HCT logic family is
Pinout
CD74HC10, CD74HCT10
(PDIP, SOIC)
TOP VIEW
1A
1B
2A
2B
2C
2Y
GND
V
CC
1C
1Y
3C
3B
3A
3Y
1
2
3
4
5
6
7
14
13
12
11
10
9
8
August 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1997
CD74HC10,
CD74HCT10
High Speed CMOS Logic
Triple 3-Input NAND Gate
File Number
1551.1
[ /Title
(CD74
HC10,
CD74
HCT10
)
/Sub-
ject
(High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate)
/Autho
r ()
/Key-
words
(High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate,
High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate,
Harris
Semi-
2
Functional Diagram
Logic Symbol
TRUTH TABLE
INPUTS
OUTPUT
nA
nB
nC
nY
L
L
L
H
L
L
H
H
L
H
L
H
L
H
H
H
H
L
L
H
H
L
H
H
H
H
L
H
H
H
H
L
NOTE: H = High Voltage Level, L = Low Voltage Level
1A
1B
2B
2C
2Y
GND
1
2
3
4
5
6
14
13
12
11
V
CC
3C
3Y
3B
1Y
1C
10
8
7
9
3A
2A
nA
nC
nY
nB
CD74HC10, CD74HCT10
3
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, I
IK
For V
I
< -0.5V or V
I
> V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . . . .
20mA
DC Output Diode Current, I
OK
For V
O
< -0.5V or V
O
> V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . .
20mA
DC Output Source or Sink Current per Output Pin, I
O
For V
O
> -0.5V or V
O
< V
CC
+ 0.5V
. . . . . . . . . . . . . . . . . . . .
25mA
DC V
CC
or Ground Current, I
CC or
I
GND
. . . . . . . . . . . . . . . . . .
50mA
Operating Conditions
Temperature Range (T
A
) . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V
I
, V
O
. . . . . . . . . . . . . . . . . 0V to V
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
Thermal Resistance (Typical, Note 3)
JA
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . .-65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3.
JA
is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications
PARAMETER
SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C
-40
o
C TO 85
o
C
-55
o
C TO 125
o
C
UNITS
V
I
(V)
I
O
(mA)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
HC TYPES
High Level Input
Voltage
V
IH
-
-
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
Low Level Input
Voltage
V
IL
-
-
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
High Level Output
Voltage
CMOS Loads
V
OH
V
IH
or
V
IL
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
High Level Output
Voltage
TTL Loads
-
-
-
-
-
-
-
-
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
-5.2
6
5.48
-
-
5.34
-
5.2
-
V
Low Level Output
Voltage
CMOS Loads
V
OL
V
IH
or
V
IL
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
Low Level Output
Voltage
TTL Loads
-
-
-
-
-
-
-
-
-
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
5.2
6
-
-
0.26
-
0.33
-
0.4
V
Input Leakage
Current
I
I
V
CC
or
GND
-
6
-
-
0.1
-
1
-
1
A
CD74HC10, CD74HCT10
4
Quiescent Device
Current
I
CC
V
CC
or
GND
0
6
-
-
2
-
20
-
40
A
HCT TYPES
High Level Input
Voltage
V
IH
-
-
4.5 to
5.5
2
-
-
2
-
2
-
V
Low Level Input
Voltage
V
IL
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
High Level Output
Voltage
CMOS Loads
V
OH
V
IH
or
V
IL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
High Level Output
Voltage
TTL Loads
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
Low Level Output
Voltage
CMOS Loads
V
OL
V
IH
or
V
IL
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
Low Level Output
Voltage
TTL Loads
4
4.5
-
-
0.26
-
0.33
-
0.4
V
Input Leakage
Current
I
I
V
CC
and
GND
0
5.5
-
0.1
-
1
-
1
A
Quiescent Device
Current
I
CC
V
CC
or
GND
0
5.5
-
-
2
-
20
-
40
A
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
(Note 4)
I
CC
V
CC
- 2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
A
NOTE:
4. For dual-supply systems theorectical worst case (V
I
= 2.4V, V
CC
= 5.5V) specification is 1.8mA.
DC Electrical Specifications
(Continued)
PARAMETER
SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C
-40
o
C TO 85
o
C
-55
o
C TO 125
o
C
UNITS
V
I
(V)
I
O
(mA)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
HCT Input Loading Table
INPUT
UNIT LOADS
All
0.6
NOTE: Unit Load is
I
CC
limit specified in DC Electrical
Specifications table, e.g. 360
A max at 25
o
C.
Switching Specifications
Input t
r
, t
f
= 6ns
PARAMETER
SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C
-40
o
C TO 85
o
C
-55
o
C TO 125
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
MIN
MAX
HC TYPES
Propagation Delay,
Input to Output (Figure 1)
t
PLH
, t
PHL
C
L
= 50pF
2
-
-
100
-
125
-
150
ns
4.5
-
-
20
-
25
-
30
ns
6
-
-
17
-
21
-
26
ns
Propagation Delay, Data Input to
Output Y
t
PLH
, t
PHL
C
L
= 15pF
5
-
8
-
-
-
-
-
ns
CD74HC10, CD74HCT10
5
Transition Times (Figure 1)
t
TLH
, t
THL
C
L
= 50pF
2
-
-
75
-
95
-
110
ns
4.5
-
-
15
-
19
-
22
ns
6
-
-
13
-
16
-
19
ns
Input Capacitance
C
I
-
-
-
-
10
-
10
-
10
pF
Power Dissipation Capacitance
(Notes 5, 6)
C
PD
-
5
-
24
-
-
-
-
-
pF
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
t
PLH
, t
PHL
C
L
= 50pF
4.5
-
-
24
-
30
-
36
ns
Propagation Delay, Data Input to
Output Y
t
PLH
, t
PHL
C
L
= 15pF
5
-
9
-
-
-
-
-
ns
Transition Times (Figure 2)
t
TLH
, t
THL
C
L
= 50pF
4.5
-
-
15
-
19
-
22
ns
Input Capacitance
C
I
-
-
-
-
10
-
10
-
10
pF
Power Dissipation Capacitance
(Notes 5, 6)
C
PD
-
5
-
28
-
-
-
-
-
pF
NOTES:
5. C
PD
is used to determine the dynamic power consumption, per gate.
6. P
D
= V
CC
2
f
i
(C
PD
+ C
L
) where f
i
= input frequency, C
L
= output load capacitance, V
CC
= supply voltage.
Switching Specifications
Input t
r
, t
f
= 6ns (Continued)
PARAMETER
SYMBOL
TEST
CONDITIONS
V
CC
(V)
25
o
C
-40
o
C TO 85
o
C
-55
o
C TO 125
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
MIN
MAX
Test Circuits and Waveforms
FIGURE 5. HC AND HCU TRANSITION TIMES AND PROPAGA-
TION DELAY TIMES, COMBINATION LOGIC
FIGURE 6. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
t
PHL
t
PLH
t
THL
t
TLH
90%
50%
10%
50%
10%
INVERTING
OUTPUT
INPUT
GND
V
CC
t
r
= 6ns
t
f
= 6ns
90%
t
PHL
t
PLH
t
THL
t
TLH
2.7V
1.3V
0.3V
1.3V
10%
INVERTING
OUTPUT
INPUT
GND
3V
t
r
= 6ns
t
f
= 6ns
90%
CD74HC10, CD74HCT10